Prof. Ilesanmi Adesida

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Ph.D. at University of California-Berkeley

• Director, Micro and Nanotechnology Laboratory

Dr. Ozgur Aktas, Research Associate

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Ph.D. at University of California-Berkeley

• Director, Micro and Nanotechnology Laboratory

Dr. Jeong-Oun Bae, Research Associate

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Ph.D. in Materials Engineering, Sungkyunkwan University, South Korea

• Fabrication of InP based waveguides.

Dr. Hyun Kyong Cho, Research Associate

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Ph.D. in Semiconductor physics, Chonbuk National University, South Korea

• Study of ohmic and schottky contatcts for III-Nitride films.

• Characterization of deep level defects in III-Nitride films.

Dr. Jong-Wook Lee, Research Associate

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Ph.D. in Electrical Engineering, Purdue University

• Characterization and modeling of microwave and RF devices

• Circuit design using microwave and RF devices

Dr. Tim Hossain, Research Associate

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Ph.D. in Physics,  Howard University

• Development of Silicon Carbide (SiC) MEMS for harsh environments.  

• Photoelectrochemical etching (PEC) of nitride materials for defect investigation and device fabrication.

Dr. Jae-Hyung Jang, Research Associate

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Ph.D. in Electrical and Computer Engineering, University of Illinois at Urbana-Champaign

• Optoelectronic receivers, long-wavelength photodiodes, HEMTs on metarmorphic GaAs substrates and InP substrates.

Dr. Vipan Kumar, Research Associate

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Ph.D. in Physics, Indian Institute of Technology, India

• Fabrication of advanced InP and GaN based devices.

Farid Khan, Research Assistant

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M.S. in Electrical and Computer Engineering, University of Illinois at Urbana-Champaign

• Processing of wide-bandgap semiconductors, SiC, AlGaN, and AlN for fabrication of novel devices.

Dong Hyun Kim, Research Assistant

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M.S. in Physics, Seoul National University, South Korea

• Development of long wavelength photodetectors and HEMTs for high speed optical communications.

Seiyon Kim, Research Assistant

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M.S. in Physics, Seoul National University, South Korea

• Development of long wavelength photodetectors and HEMTs for high speed optical communications.

Almaz Kuliev, Research Assistant

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M.S. in Electrical Engineering, University of Illinois at Urbana-Champaign

• Development, fabrication and characterization of high-power AlGaN/GaN HEMTs.

Bill Lanford, Research Assistant

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M.S. in Electrical Engineering, University of Illinois at Urbana-Champaign

• Reduced gate-length processing of HEMTs using electron beam lithography.

Randy Schwindt, Research Assistant

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M.S. in Electrical Engineering, Texas A&M

• AlGaN/GaN HEMTs, microwave circuits, and characterization and modeling of LNAs and HPAs

Deepak Selvanathan, Research Assistant

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M.S. in Electrical Engineering, University of Cincinnati, 1996

• Study of ohmic and schottky contatcts for AlGaN/GaN HEMTS & photodetectors.

Mike Word, Research Assistant

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B.S. in Computer Engineering, University of Illinois at Urbana-Champaign, 2002

• Development of sub-micron novel devices in Si and InP using advanced electron beam lithography techniques.

Weifeng Zhao, Research Assistant

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Ph.D. at University of California-Berkeley

• Director, Micro and Nanotechnology Laboratory