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| [PDF] | 1. I. Adesida, R. Shimizu, and T. E. Everhart, "Monte Carlo simulation of electron penetration through thin films of PMMA," Appl. Phys. Lett., 33, p. 849, 1978.
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| [PDF] | 2. I. Adesida, T. E. Everhart, and R. Shimizu, "High resolution electron beam lithography on thin films," J. Vac. Sci. and Technol., 16, p. 1743, 1979.
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| [PDF] | 3. Y. C. Lin, I. Adesida, and A. R. Neureuther, "Monte Carlo simulation of registration signals for electron beam microfabrication," Appl. Phys. Lett., 36, p. 672, 1980.
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| [PDF] | 4. I. Adesida and T. E. Everhart, "Subtrate thickness considerations in electron beam lithography," J. Appl. Phys., 51, p. 5994, 1980.
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| [PDF] | 5. I. Adesida, R. Shimizu, and T. E. Everhart, "A study of electron penetration in solids using Direct Monte Carlo approach," J. Appl. Phys., 51, p. 5962, 1980.
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| [PDF] | 6. L. Karapiperis, I. Adesida, C. A. Lee, and E. D. Wolf, "Ion beam exposure profiles in PMMA-computer simulation," J. Vac. Sci. and Technol., 19, p. 1259, 1981.
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| [PDF] | 7. J. D. Chinn, I. Adesida, E. D. Wolf, and R. C. Tiberio, "Reactive ion etching for submicron structures," J. Vac. Sci. Technol., 19, p. 1418, 1981.
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| [PDF] | 8. Y. C. Lin, A. R. Neureuther, and I. Adesida, "Alignment signals from silicon tapered steps for electron beam lithography," J. Appl. Phys., 53, p. 899, 1982.
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| [PDF] | 9. I. Adesida and L. Karapiperis, "Monte Carlo simulation of ion penetration in solids," Radiation Effects, 61, p. 223, 1982.
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| [PDF] | 10. I. Adesida, J. D. Chinn, L. Rathbun, and E. D. Wolf, "Dry development of ion beam exposed resists," J. Vac. Sci. Technol., 21, p. 666, 1982.
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| [PDF] | 11. L. Karapiperis, D. Dieumegard, and I. Adesida, "Effect of recoil atoms on resolution of ion beam lithography," Nuclear Instruments and Methods, 209/ 210, p. 165, 1983.
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| [PDF] | 12. I. Adesida, "Ion bombardment of resists," Nuclear Instruments and Methods, 209/210, p. 79, 1983. (Invited paper at IBMM 1982 in Grenoble, France).
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| [PDF] | 13. J. D. Chinn, I. Adesida, and E. D. Wolf, "Profile control by chemically assisted ion beam and reactive ion beam etching," Appl. Phys. Lett., 43, p. 185, 1983.
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| [PDF] | 14. N. Samoto, R. Shimizu, H. Hashimoto, I. Adesida, E. D. Wolf, and S. Namba, "Exposure and development simulations for nanometer electron beam lithography," J. Vac. Sci. Technol., B1, p. 1367, 1983.
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| [PDF] | 15. K. Balasubramanyan, I. Adesida, A. Ruoff, and E. D. Wolf, "Germanium selenide as a negative inorganic resist for ion beam microfabrication," Microelectronics J., 14, p. 35, 1983.
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| [PDF] | 16. J. D. Chinn, A. Fernandez, I. Adesida, and E. D. Wolf, "Chemically assisted ion beam etching of GaAs, Ti, and Mo," J. Vac. Sci. Technol., A1, p. 701, 1983.
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| [PDF] | 17. E. D. Wolf, I. Adesida, and J. D. Chinn, "Advanced submicron research and technology at the National Submicron Facility," in Proc. IEEE, 71, p. 589, 1983; also appeared in VLSI: Technology and Design, O. G. Foberth and W. D. Grobman, Eds. New York: IEEE Press, p.62, 1984.
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| [PDF] | 18. I. Adesida, M. Zhang, R. Sadler, R. Tiberio, and E.D. Wolf, "Submicrometer-gate GaAs FET fabrication using masked ion beam/optical hybrid lithography," J. Vac. Sci. Technol., B1, p. 1080, 1983.
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| [PDF] | 19. A. Muray, I. Adesida, M. Isaacson, and B. Whitehead, "Fabrication of apertures, slots and grooves at the 8-80 nm scale in silicon and metal films," J. Vac. Sci. Technol., B1, p. 1091, 1983.
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| [PDF] | 20. J. D. Chinn, I. Adesida, and E. D. Wolf, "Chemically assisted ion beam etching for submicron structures," J. Vac. Sci. Technol., B1, p. 1028, 1983.
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| [PDF] | 21. M. Zhang, J.Z. Li, I. Adesida, and E.D. Wolf, "Reactive ion etching of submicron structures in refractory metal silicides," J. Vac. Sci, Technol., B1, p. 1037, 1983.
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| [PDF] | 22. I. Adesida, C. Anderson, and E. D. Wolf, "Resist exposure with light ions," J. Vac. Sci. Technol., B1, p. 1182, 1983.
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| [PDF] | 23. M. Zhang, I. Adesida, R. Tiberio, and E.D. Wolf, "Masked ion beam lithography for submicron gate GaAs FET fabrication," in Microcircuit Eng., H. Ahmed, J. Cleaver, and G. Jones, Eds. London: Academic Press, pp. 157-164, 1983.
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| [PDF] | 24. I. Adesida, A. Muray, M. Isaacson, and E.D. Wolf, "Very high resolution ion beam lithography," in Microcircuit Eng., H. Ahmed. J. Cleaver, and G. Jones, Eds. London: Academic Press, pp. 152-156, 1983.
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| [PDF] | 25. E.D. Wolf, I. Adesida, J. D. Chinn, M. Zhang, and J. Z. Li, "Dry etching of materials used in VLSI circuits," in Microcircuit Engineering, H. Ahmed, J. Cleaver, and G. Jones, Eds. London: Academic Press, pp. 415-420, 1983.
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| [PDF] | 26. J. D. Chinn, W. Phillips, I. Adesida, and E. D. Wolf, "Ion beam etching of Si, refractory metals and refactory metal silicides using a chemistry assisted technique," J. Electrochem. Soc., 131, p. 375, 1984.
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| [PDF] | 27. E. D. Wolf, I. Adesida, and J. D. Chinn, "Dry etching of submicron structures," J. Vac. Sci. Technol., A2, p. 464, 1984.
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| [PDF] | 28. I. Adesida, M. Zhang, and E. D. Wolf, "Lithography with silicon ions," J. Electron. Mater., 4, p. 689, 1984.
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| [PDF] | 29. I. Adesida and L. Karapiperis, "The range of light ions in polymeric resists," J. Appl. Phys., 56, p. 1801, 1984.
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| [PDF] | 30. J. Z. Li, I. Adesida, and E. D. Wolf, "Orientation dependent reactive ion etching of GaAs in SiC14," Appl. Phys. Lett., 45, p. 897, 1984.
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| [PDF] | 31. A. Muray, M. Isaacson, and I. Adesida, "AlF3 - A new very high resolution electron beam resist," Appl. Phys. Lett., 45, p. 589, 1984.
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| [PDF] | 32. M. Isaacson, A. Muray, M. Scheinfein, I. Adesida, and E. Kratschmer, Microelectron Eng., 2, p.58, 1984.
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| [PDF] | 33. J.Z. Li, I. Adesida, and E. D. Wolf, "Evidence of crystallographic etching of (100) GaAs using SiC14 reactive ion etching," J. Vac. Sci. Technol., B3, p. 40B,1985.
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| [PDF] | 34. I. Adesida, A. Muray, E. Kratschmer, M. Isaacson, and E. D. Wolf, "Ion beam lithography at nanometer dimensions," J. Vac. Sci. Technol., B3, p. 45, 1985.
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| [PDF] | 35. A. Muray, M. Sheinfein, M. Isaacson, and I. Adesida, "Radiolysis and resolution limits of inorganic halide resist," J. Vac. Sci. Technol., B3, p. 367, 1985.
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| [PDF] | 36. D. Henderson, J.C. White, H.G. Craighead, and I. Adesida, "Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure," Appl. Phys. Lett., 46, p. 900,. 1985.
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| [PDF] | 37. J. Z. Li, I. Adesida, and E. D. Wolf, "Reactive ion etching of silicon and tantalum silicide for submicron structures," Chinese J. Semiconductors, 6, p. 451, 1985, (in Chinese).
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| [PDF] | 38. I. Adesida, "Fine line lithography using ion beams," Nuclear Instruments and Methods, B 7/8, p. 923, 1985.
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| [PDF] | 39. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. Aina and H. Hier, "Dependence of current-gain cut-off frequency on gate-length in submicron InGaAs/InAlAs MODFETs," Electron. Lett., 25, pp. 440-441, 1989.
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| [PDF] | 40. T. Tang, L. Miller E. Andideh, T. Cockerill, P. Swanson, R. Bryan, T. DeTemple, I Adesida, and J. Coleman, "Loss in heterostructure waveguide bends formed on a patterned substrate," IEEE Photon.. Technol. Lett., 1, pp. 120-122, 1989.
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| [PDF] | 41. A. Ketterson, J. Laskar, T. Brock, I. Adesida, J. Kolodzey, O. Aina, and H. Hier, "DC and RF characterization of short gate length InGaAs/InAlAs MODFETs," IEEE Trans. Electron Devices, 36, pp. 2362-2363, 1989.
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| [PDF] | 42. A. Ketterson, E. Andideh, I. Adesida, T. Brock, J. Baillargeon, J. Laskar, K. Y. Cheng, and J. Kolodzey, "Selective reactive ion etching for short gate-length GaAs/AlGaAs pseudomorphic MODFETs," J. Vac. Sci. Technol., B7, pp. 1493-1496, 1989.
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| [PDF] | 43. E. Andideh, I. Adesida, T. Brock, C. Caneau, and V. Keramidas, "Short period gratings for long wavelength optical devices," J. Vac. Sci. Technol., B7, pp. 1841-1845, 1989.
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| [PDF] | 44. J. Kolodzey, J, Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco, R. Fischer and A. Y. Cho, "Cryogenic temperature performance of modulation-doped field effect transistors," Electron. Lett., 25, pp. 777-778, 1989.
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| [PDF] | 45. J. Laskar, A. Ketterson, J. Baillargeon, T. Brock, I. Adesida, K. Y. Cheng and J. Kolodzey, "Gate controlled negative differential resistance in drain current characteristics of GaAs/InGaAs/AlGaAs pseudomorphic MODFETs," IEEE Electron Device Lett., 10, pp. 528-530, 1989.
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| [PDF] | 46. J. Laskar, J. Kolodzey, A. A. Ketterson, I. Adesida, and A. Y. Cho, "Characteristics of GaAs/AlGaAs-Doped channel MISFET's at cryogenic temperature," IEEE Electron Device Lett. 11, pp. 300-302, 1990.
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| [PDF] | 47. J. Bigelow, J. P. Leburton, M. Klejwa and I. Adesida, "A two-dimensional iterative Poison solver (TIPS) for ultra-confined semiconductor devices," IEEE Trans. Electron Devices 37, pp. 821-823, 1990.
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| [PDF] | 48. S. R. Kisting, P. W. Bohn, E. Andideh, I. Adesida, B. T. Cunningham, G. E. Stillman, and T. Harris, "High precision temperature-and energy-dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes," Appl. Phys. Lett. 57, pp. 1328-1330, 1990.
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| [PDF] | 49. J. Laskar, J. Kolodzey, S. Boor, K. C. Hsieh, S. Kalem, S. Caracci, A. A. Ketterson, T. Brock, I. Adesida, D. Sivco, and A. Y. Cho, "High indium content graded channel GaInAs/AlInAs Pseudomorphic MODFETs," J. Electron Mater., 19, pp. 249-252, 1990.
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| [PDF] | 50. I. Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, and H. Morkoc, "0.2 lm T-Gate InAlAs/InGaAs MODFET with Ft = 170 GHz," Microelectronic Eng., 11, pp. 69-72, 1990.
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| [PDF] | 51. J. Kolodzey, J. Laskar, S. Boor, S. Agarwala, S. Caracci, A. A. Ketterson, I. Adesida, K. C. Hsieh, D. Sivco, and A. Y. Cho, "Direct-current and radio-frequency properties of InAlAs/InGaAs modulation doped field effect transistors with graded channels," J. Vac. Sci. Technol.. B8, pp. 360-363, 1990.
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| [PDF] | 52. W. H. Guggina, A. A. Ketterson, E. Andideh, J. Hughes, I. Adesida, S. Caracci, and J. Kolodzey, "Characterization of GaAs/AlxGa1-xAs Selective Reactive Ion Etching in SiC14/SiF4 Plasmas," J. Vac. Sci. Technol.. B8, p. 1956, 1990.
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| [PDF] | 53. I. Adesida, K. Nummila, E. Andideh, J. Hughes, C. Caneau, R. Bhat, and R. Holmstrom, "Nanostructure Fabrication in InP and Related Compounds," J. Vac. Sci. Technol., B8, p. 1357, 1990.
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| [PDF] | 54. J. Laskar, J. Kolodzey, A. A. Ketterson, I. Adesida, J. Baillargeon, and K. Y. Cheng, "Frequency response of submicron pseudomorphic MODFETs at cryogenic temperatures," Cryogenics 30, p. 1134, 1990.
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| [PDF] | 55. W. H. Guggina, D. G. Ballegeer, and I. Adesida, "Effects of reactive ion etching on AlGaAs/GaAs heterostructures," Nucl. Instr. Meth B59/60, pp. 1011-1014, 1991.
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| [PDF] | 56. M. Tong, A. Ketterson, K. Nummila, I. Adesida, L. Aina, and M. Mattingly, "0.23 µm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE," Electron. Lett., 27, pp. 1426-1427, 1991.
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| [PDF] | 57. L. Aina, M. Burgess, M. Mattingly, J. M. O'Connor, A. Meerschaert, M. Tong, A. Ketterson, and I. Adesida, "0.33 µm gate-length millimeter-wave InP-channel HEMT's with high ft and fmax," IEEE Electron Device Lett.. 12, pp. 483-485, 1991.
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| [PDF] | 58. K. Nummila, A. Ketterson, S. Caracci, J. Kolodzey, and I. Adesida, "Short channel effects in sub- 100 nm GaAs MESFETs," Electron. Lett., 27, pp. 1519-1521, 1991.
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| [PDF] | 59. I. Adesida, D. G. Ballegeer, J.-W. Seo, A. Ketterson, H. Chang, K. Y. Cheng and T. Gessert, "Etching of indium tin oxide in methane/hydrogen plasmas," J. Vac. Sci. Technol., B9, pp. 3551-3554, 1991.
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| [PDF] | 60. K. Nummila, M. Tong, A. A. Ketterson, and I. Adesida, "Fabrication of sub-100 nm T-gates with SiN passivation layer," J. Vac. Sci. Technol., B9, pp. 2870-2874, 1991.
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| [PDF] | 61. L. Aina, M. Burgess, M. Mattingly, J. O'Connor, A. Meerschaert, M. Tong, A. Ketterson, "0.33 lm millimeter-wave InP-channel HEMTs, with high fT and fmax," IEEE Trans. Electron Devices, 38, pp. 2702, 1991.
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| [PDF] | 62. J-W. Seo, T. Koker, S. Agarwala, and I. Adesida, "Etching characteristics of AlxGa1-xAs in (NH4)2Sx solutions," Appl. Phys. Lett., 60, pp. 1114-1116, 1992.
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| [PDF] | 63. A. Ketterson, M. Tong, J.-W. Seo, K. Nummila, J. J. Morikuni, S. M. Kang, and I. Adesida, "A high performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver," IEEE Photon.. Technol. Lett.,4, pp. 73-76, 1992.
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| [PDF] | 64. M. Tong, D. G. Ballegeer, A. Ketterson, E. J. Roan, K. Y. Cheng, and I. Adesida, "A comparative study of wet and dry selective etching for GaAs/InGaAs/AlGaAs pseudomorphic MODFETs," J. Elect. Mat., 21, pp. 9-15, 1992.
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| [PDF] | 65. J.-W. Seo, A. A. Ketterson, D. G. Ballegeer, K. Y. Cheng, I. Adesida, X. Li, and T. Gessert, "A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrodes," IEEE Photon.. Technol. Lett., 4, pp. 888-890, 1992.
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| [PDF] | 66. O. Aina, M. Burgess, M. Mattingly, A. Meershaert, J. M. O'Connor, M. Tong, A. Ketterson, and I. Adesida, "A 1.45-W/mm, 30 GHz InP-channel power HEMT," IEEE Electron Device Lett., 13 pp. 300-302, 1992.
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| [PDF] | 67. M. Tong, K. Nummila, J-W. Seo, A. A. Ketterson, and I. Adesida, "Process for enhancement/depletion-mode GaAs/InGaAs/AlGaAs pseudomorphic MODFETs using selective wet gate recessing," Electron. Lett., 28, pp. 1633-1634, 1992.
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| [PDF] | 68. M. Tong, K. Nummila, A. A. Ketterson, I. Adesida, L. Aina, and M. Mattingly, "Selective wet etching characteristics of lattice-matched InGaAs/InAlAs/InP," J. Electrochem. Soc., 139, p. L91, 1992.
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| [PDF] | 69. J. E. Maslar, S. R. Kisting, P. W. Bohn, I. Adesida, D. G. Ballegeer, C. Caneau, and R. Bhat, "Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP," Physical Review B, 46, p. 1820, 1992.
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| [PDF] | 70. M. Tong, K. Nummila, A. A. Ketterson, I. Adesida, L. Aina, and M. Mattingly, "OMVPE-grown InAlAs/InGaAs/InP MODFETs with performance comparable to those grown by MBE," IEEE Transactions Electron Devices, 39, p. 2411, 1992.
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| [PDF] | 71. M. Tong, K. Nummila, A. A. Ketterson, I. Adesida, C. Caneau, and R. Bhat, "InAlAs/InGaAs/InP MODFETs with uniform threshold voltage obtained by selective wet gate recess," IEEE Electron Device Lett., 13, p. 525, 1992.
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| [PDF] | 72. H. Chang, K. Nummila, R. Grundbacher, I. Adesida, J. P. Leburton, and K. Hess, "Fabrication of lateral superlattices using multilayer resist techniques," J. Vac. Sci. Technol., B10, p. 2900, 1992.
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| [PDF] | 73. A. Ketterson, M. Tong, J. W. Seo, K. Nummila, K. Y. Cheng, J. Morikuni, S. Kang, and I. Adesida, "Submicron modulation-doped field effect transistor/metal-semiconductor-metal-based optoelectronic integrated circuit receiver fabricated by direct write electron-beam lithography," J. Vac. Sci. Technol., B10, p. 2936, 1992.
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| [PDF] | 74. J. E. Maslar, P. W. Bohn, D. G. Ballegeer, E. Andideh, I. Adesida, C. Caneau, and R. Bhat, "Structural modification in reactive-ion-etched i-InP ands n+-InP studied by Raman scattering," J. Appl. Phys., 77, pp. 2983-2994, 1993.
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| [PDF] | 75. K. Nummila, M. Tong, A. Ketterson, I. Adesida, C. Caneau, and R. Bhat, "MOVPE-grown InAlAs/InGaAs/InP MODFETs with very high fT ," Electron. Lett., 29, pp. 274-275, 1993.
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| [PDF] | 76. S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma," Appl. Phys. Lett., 62, pp. 2830-2832, 1993.
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| [PDF] | 77. S. Agarwala, M. Tong, D. G. Ballegeer, K. Nummila, A. A. Ketterson, and I. Adesida, "Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers," J. Elect. Mat., 22, pp. 375-381, 1993.
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| [PDF] | 78. A. Ketterson, J.-W. Seo, M. Tong, K. Nummila, J. Morikuni, K. Y. Cheng, S. M. Kang, and I. Adesida, "A MODFET-based optoelectronic integrated circuit receiver for optical interconnects," IEEE Transactions Electron Devices, ED-40, pp. 1406-1416, 1993.
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| [PDF] | 79. S. Agarwala, K. Nummila, I. Adesida, C. Caneau, and R. Bhat, "InAlAs/InGaAs Heterostructure FETs processed with selective reactive ion etching gate-recess technology," IEEE Electron Device Lett., 14, pp. 425-427, 1993.
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| [PDF] | 80. D. G. Ballegeer, K. Nummila, I. Adesida, C. Caneau, and R. Bhat, "0.32 µm gate-length InP-Channel MODFET's with ft above 90 GHz," Electron. Lett., 29, pp. 1375-1376, 1993.
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| [PDF] | 81. I. Adesida, A. Mahajan, E. Andideh, M. A. Khan, D. T. Olsen, and J. N. Kuznia, "Reactive ion etching of GaN in SiCl4 plasmas," Appl. Phys. Lett., 63, pp. 2777-2779, 1993.
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| [PDF] | 82. J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Phonon-Electron Interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by raman scattering," Appl. Phys. Lett., 63, pp. 1909-1911, 1993.
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| [PDF] | 83. D. G. Ballegeer, K. Nummila, and I. Adesida, "A multilayer resist process for asymmetric gate recess in field-effect transistors," J. Vac. Sci. Technol., 11, pp. 2560-2564, 1993.
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| [PDF] | 84. J.-W. Seo, I. Adesida, C. Caneau, and R. Bhat, "Application of Indium-Tin-Oxide with improved transmittance at 1.3 µm for MSM photodetectors," IEEE Photon.. Technol. Lett., 5, pp. 1313-1315, 1993.
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| [PDF] | 85. R. Grundbacher, H. Chang, M. Hannan, and I. Adesida, "Fabrication of parallel quantum wires in GaAs/AlGaAs heterostructures using AlAs etch stop layers," J. Vac. Sci. Technol., B11, pp. 2254-2257, 1993.
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| [PDF] | 86. S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Characteristics of selective reactive ion etching of InGaAs/InAlAs heterostructures using HBr plasma," J. Vac. Sci. Technol., B11, pp. 2258-2261, 1993.
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| [PDF] | 87. S. Q. Gu, X. Liu, M. Covington, E. Reuter, H. Chang R. Panepucci, I. Adesida, and S. G. Bishop, "Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires," J. Appl. Phys. 75, 8071-8074 (1994).
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| [PDF] | 88. H. Chang, R. Grundbacher, T. Kawamura, J.-P. Leburton, and I. Adesida, "Oscillatory conductance in a double-bend quantum dot device," Semicond. Sci. and Technol. 9, 210-212 (1994).
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| [PDF] | 89. H. Chang, R. Grundbacher, D. Jovanovic, J.-P. Leburton, and I. Adesida, "A laterally tunable quantum dot transistor." J. Appl. Phys. 76, 3209-3211 (1994).
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| [PDF] | 90. D. Jovanovic, J.-P. Leburton, H. Chang, R. Grundbacher, and I. Adesida, "Disorder induced resonant tunneling in planar quantum dot nanostructures," Phys. Rev. B. 50, 5412-5419 (1994).
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| [PDF] | 91. P. Fay, R. T. Brockenbrough, G. Abeln, P. Scott, S. Agarwala, I. Adesida, and J. W. Lyding, "Scanning Tunneling Microscope stimulated oxidation of silicon (100) surfaces," J. Appl. Phys. 75, 7545-7549 (1994).
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| [PDF] | 92. E. E. Reuter, S.Q. Gu, Q. Xu, W. Wohlmuth, I. Adesida, and S.G. Bishop, "Photo-injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy," IEEE Photon.. Technol. Lett., 6, 966 (1994).
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| [PDF] | 93. J. E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As," Appl. Phys. Lett. 64, 3575-3577 (1994).
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| [PDF] | 94. I. Adesida, A.T. Ping, C. Youtsey, T. Dow, M. A. Khan, D. T. Olson, and J.N. Kuznia, "Characteristics of chemically assisted ion beam etching of gallium nitride," Appl Phys. Lett. 65, 889-891 (1994).
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| [PDF] | 95. A.T. Ping, I. Adesida, M.A. Khan and J.N. Kuznia, "Reactive ion etching of gallium nitride using hydrogen bromide plasmas," Electron. Lett. 30, 1895-1897 (1994).
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| [PDF] | 96. S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Depth distribution of reactive ion etching-induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements," Appl. Phys. Lett. 64, 2979-2981 (1994).
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| [PDF] | 97. M. Arafa, C. Youtsey, R. Grundbacher, and I. Adesida, "Fabrication of Nanostructures in AlGaSb/InAs Using Electron Beam Lithography and Chemically Assisted Ion Beam Etching," J. Vac. Sci. Technol. B12, 3623-33625 (1994).
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| [PDF] | 98. R. Grundbacher, P. Fay, and I. Adesida, "Fabrication and Characterization of InAlAs/InGaAs Striped Channel MODFETS," J. Vac. Sci. Technol. B12, 3750-3754 (1994).
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| [PDF] | 99. C. Youtsey, R. Grundbacher, R. Panepucci, I. Adesida, and C. Caneau, "Characterization of Chemically Assisted Ion Beam Etching of InP," J. Vac. Sci. Technol. B12, 3317-3321 (1994).
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| [PDF] | 100. P. Fay, S. Agarwala, C. Scafidi, I. Adesida, C. Caneau and R. Bhat, "RIE-Induced Damage in InAlAs/InGaAs Heterostructure FETs Processed in HBr Plasma," J. Vac. Sci. Technol. B12, 3623-3326 (1994).
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| [PDF] | 101. K. Nummila, A. A. Ketterson, and I. Adesida, "Delay time analysis for short gate-length GaAs MESFETs," Solid State Electronics 38, pp. 517-524, 1994.
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| [PDF] | 102. A. Archer, J.M. Hetrick, M. H. Nayfeh and I. Adesida, "Nanofabrication on Electron Beam Resist Using Scanning Tunneling Microscopy," J. Vac. Sci. Technol. B12, 3166-3170 (1994).
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| [PDF] | 103. J.E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Electron-Phonon Interactions in n-type In0.53Ga0.47As and In0.52Al0.48As Studied by Electronic Raman Scattering," Physical Review B 50, pp. 17 143-17 150, 1994.
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| [PDF] | 104. J.E. Maslar, J.F. Dorsten, P.W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Structural and Electronic Effects of Argon-Sputtering and Reactive Ion Etching on In0.53Ga0.47As and In0.52Al0.48As Studied by Inelastic Light Scattering, J. Vac. Sci. Technol., B13, 988- 994, 1995.
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| [PDF] | 105. J.E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Electron-Phonon Interactions in n-type In0.53Ga0.47As and In0.52Al0.48As Studied by Electronic Raman Scattering," Phys. Rev. B 50, 17143-17150, 1995.
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| [PDF] | 106. N. Pan, J. Elliot, H. Hendriks, L. Aucoin, P. Fay, and I. Adesida, "InAlAs/InGaAs high electron mobility transistors on low temperature buffer layers by metalorganic chemical vapor deposition," Appl. Phys. Lett., 66, 212-214, 1995.
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| [PDF] | 107. A.T. Ping, I. Adesida, and M. A. Khan, "Study of chemically assisted ion beam etching of GaN using HCl gas," Appl. Phys. Lett., 67, 1250-1252, 1995.
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| [PDF] | 108. M. Arafa, K. Ismail, P. Fay, J. O. Chu, B. S. Meyerson, and I. Adesida, "High-tranconductance p-type SiGe modulation-doped field-effect transistor," Electron. Lett. 31, 680-681, 1995.
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| [PDF] | 109. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 µm wavelength," Electron. Lett. 31, 755-756, 1995.
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| [PDF] | 110. A.T. Ping, A. Youtsey, I. Adesida, M. A. Khan, D. T. Olsen, and J. N. Kuznia, "Chemically assisted ion beam etching of Gallium Nitride," J. Electron. Mater. 24, 229-234, 1995.
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| [PDF] | 111. J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat, "Structural and Electronic Effects of Argon-Sputtering and Reactive Ion Etching on In0.53Ga0.47As and In0.52Al0.48As Studied by Inelastic Light Scattering," J. Vac. Sci. Technol., B13, 988- 994 (1995).
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| [PDF] | 112. N. Pan, J. Elliot, H. Hendriks, L. Aucoin, P. Fay, and I. Adesida, "InAlAs/InGaAs high electron mobility transistors on low temperature buffer layers by metalorganic chemical vapor deposition," Appl. Phys. Lett., 66, 212-214 (1995).
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| [PDF] | 113. A.T. Ping, I. Adesida, and M. A. Khan, "Study of chemically assisted ion beam etching of GaN using HCl gas," Appl. Phys. Lett., 67, 1250-1252 (1995).
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| [PDF] | 114. M. Arafa, K. Ismail, P. Fay J. O. Chu, B. S. Meyerson, and I. Adesida, "High-tranconductance p-type SiGe modulation-doped field-effect transistor," Electron. Lett. 31, 680-681 (1995)
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| [PDF] | 115. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 µm wavelength," Electron. Lett. 31, 755-756 (1995)
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| [PDF] | 116. A.T. Ping, A. Youtsey, I. Adesida, M. A. Khan, D. T. Olsen, and J. N. Kuznia, "Chemically assisted ion beam etching of Gallium Nitride," J. Electron. Mater. 24, 229-234 (1995).
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| [PDF] | 117. R. Pannepucci, C. Youtsey, D. Turnbull, S. Gu, C. Caneau, S. G. Bishop and I. Adesida, "Fabrication of InP/InGaAs quantum wires by Free Cl2," J. Vac. Sci. Technol. B13, 2752-2756 (1995).
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| [PDF] | 118. C. Youtsey and I. Adesida, "A comparative study of Cl2 and HCl gases for the chemically assisted ion beam etching of InP," J. Vac. Sci. Technol. B13, 2360-2365 (1995).
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| [PDF] | 119. M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida, "A 70 GHz low operating bias self-aligned p-type SiGe MODFET," IEEE Electron Dev. Lett. 17(12), 586-588 (1996).
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| [PDF] | 120. M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida, "DC and RF performance of 0.25 µm p-type SiGe MODFET," IEEE Electron Dev. Lett. 17(9), 449-451 (1996).
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| [PDF] | 121. M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida. "High speed p-type SiGe modulation-doped field-effect transistors," IEEE Electron Dev. Lett. 17(3), 124-126 (1996).
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| [PDF] | 122. P. Fay, W. Wohlmuth, C. Caneau, and I. Adesida, "18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-µm wavelength communication systems," IEEE Photon. Technol. Lett., 8 (5), 679-681 (1996).
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| [PDF] | 123. R. Grundbacher, C. Youtsey, and I. Adesida, "Four-layer resist process for asymmetric gate recess. Microelectronic Engineering, 30, 317-320 (1996).
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| [PDF] | 124. M. Hannan, R. Grundbacher, J. Eom, V. Chandrasekhar, R. W. Gianneta, and I. Adesida, "Conductance Studies in a Double-Bend Quantum Structure," Superlattices and Microstructures 20, 427-433 (1996).
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| [PDF] | 125. M. Hannan, R. W. Gianneta, R. Grundbacher, and I. Adesida, "Fabrication of Quantum Nanostructures for the Measurement of Thermo-Electric Phenomena," J. Vac. Sci. Technol., B14, 4062-4067 (1996).
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| [PDF] | 126. A. Mahajan, P. Fay, C. Caneau, and I. Adesida, "High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP," Electron. Lett. 32, 1037-1038 (1996).
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| [PDF] | 127. M. Osowski, R. Panepucci, D. A. Turnbull, S. Q. Gu, A. M. Jones, S. G. Bishop, I. Adesida, and J. J. Coleman, "Lateral inhomogeneity in InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition," Appl. Phys. Lett., 68, 1087-1089 (1996).
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| [PDF] | 128. M. Osowski, R. Panepucci, E. Reuter, S. G. Bishop, I. Adesida, and J. J. Coleman, "Fabrication and Characterization of InGaAs-GaAs Quantum Wire Arrays by Selective-Area Metalorganic Chemical Vapor Deposition," SPIE 2918, 166-181 (1996).
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| [PDF] | 129. R. Panepucci, M. L. Osowski, D. A. Turnbull, S. Q. Gu, S. G. Bishop, J. J. Coleman, and I. Adesida, "Inhomogeneity in the fabrication of InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition," Superlattices and Microstructures, 20, 111-116 (1996).
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| [PDF] | 130. R. Panepucci, C. Youtsey, E. Reuter, J. Kluender, C. Caneau, J. J. Coleman, S.G. Bishop, and I. Adesida, "Quantum Dots Fabricated in InP/InGaAs by Free Cl2 Etching," J. Vac. Sci. Technol., 14, 3641-3645 (1996).
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| [PDF] | 131. A.T. Ping, M. Asif Khan, and I. Adesida, "Ohmic contacts to n-type GaN using Pd/Al Metallization," J. Electron. Mat., 25, 819-824 (1996).
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| [PDF] | 132. A.T. Ping, A. C. Schmitz, M. Asif Khan and I. Adesida, "Dry etching of GaN using chemically assisted on beam etching with HCl and H2/Cl2," J. Electron. Mat., 25, 825-829 (1996).
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| [PDF] | 133. A.T. Ping, A. C. Schmitz, M. Asif Khan, and I. Adesida, "Characteristics of Pd Schottky barrier to n-type GaN," Electron. Lett., 32, 68-70 (1996).
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| [PDF] | 134. A.C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, and I. Adesida, "High-temperature characteristics of Pd Schottky contacts on n-type GaN," Electron. Lett., 32, 1832-1833 (1996).
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| [PDF] | 135. A.C. Schmitz, A. T. Ping, I. Adesida, M. Asif Khan, and J. W. Yang, "Schottky barrier properties of various metals on n-type GaN," Semiconductor Science & Technology, 11, 1464-1467 (1996).
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| [PDF] | 136. J.B.D. Soole, M. R. Amersfoort, H. P. LeBlanc, A. Rajhel, C. Caneau, C. Youtsey, and I. Adesida, "Compact polarization independent InP reflective arrayed waveguide grating filter," Electron. Lett., 32, 323-324 (1996).
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| [PDF] | 137. J.B.D. Soole, M. R. Amersfoort, H. P. LeBlanc, N. C. Andreadakis, A. Rajhel, C. Caneau, M. A. Koza, R. Bhat, C. Youtsey, and I. Adesida, "Polarization-independent InP arrayed waveguide filter using square cross-section waveguides. Electron. Lett., 32, 1769-1771 (1996).
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| [PDF] | 138. W. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, and I. Adesida, "InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights," Appl. Phys. Lett., 69, 3578-3580 (1996).
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| [PDF] | 139. W. Wohlmuth, P. Fay, and I. Adesida, "Dark current suppression in GaAs metal-semiconductor-metal photodetectors," IEEE Photon. Tech. Lett., 8, 1061-1063 (1996).
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| [PDF] | 140. W. Wohlmuth, P. Fay, C. Caneau, and I. Adesida, "Low dark current, long wavelength metal-semiconductor-metal photodetectors," Electron. Lett., 32, 249-250 (1996).
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| [PDF] | 141. A. Xiang, W. Wohlmuth, P. Fay, S. M. Kang, and I. Adesida, "Modeling of InGaAs MSM Photodetector for Circuit-Level Simulation, J. Lightwave Technol., 14, 716-723 (1996).
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| [PDF] | 142. C. Youtsey, I. Adesida, J. B. D. Soole, M. R. Amersfoot, H. P. Leblanc, N. C. Andreadakis, A. Rajhel, C. Caneau, M. A. Koza, and R. Bhat, "Fabrication of InP-based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etching," J. Vac. Sci. Technol., B14, 4091-4095 (1996).
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| [PDF] | 143. M. Hannan, R. W. Gianneta, R. Grundbacher, and I. Adesida, "Transport study in high mobility GaAs/AlGaAs lateral superlattices," J. Vac. Sci. Technol., B15, 1291-1294 (1997).
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| [PDF] | 144. I. Adesida, M. A. Arafa, K. Ismail, J. O. Chu, and B. S. Meyerson, "Submicrometer p-Type SiGe Modulation-doped Field-Effect Transistors for High Speed Application,". Microelectron. Eng., 35, 257-260 (1997).
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| [PDF] | 145. R. Grundbacher, I. Adesida, Y. C. Kao, and A. A. Ketterson, "Single step lithography for double-recessed gate pseudomorphic high electron mobility transistors," J. Vac. Sci. Technol., B15, 49-52 (1997).
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| [PDF] | 146. A. Mahajan, M. Arafa, P. Fay, C. Caneau, and I. Adesida, "0.3-µm Gate-Length Enhancement-Mode InAlAs/InGaAs/InP High-Electron Mobility Transistor," IEEE Electron Device Lett., 18, 284-286 (1997).
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| [PDF] | 147. A. Mahajan, G. Cueva, M. Arafa, P. Fay, and I. Adesida, "Fabrication and Characterization of an InAlAs/InGaAs/InP Ring Oscillator Using Integrated Enhancement- and Depletion-Mode High Electron Mobility Transistors," IEEE Electron Device Lett., 18, 391-393 (1997).
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| [PDF] | 148. M. Osowski, R. Panepucci, I Adesida, and J. J. Coleman, "A strained InGaAs-GaAs Asymmetric Cladding Gain-Coupled DFB Laser with Titanium Surface Gratings by Metalorganic Chemical Vapor Deposition," IEEE Photon. Technol., Lett., 9, 422-440 (1997).
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| [PDF] | 149. R. M. Lammert, A. M. Jones, C. Youtsey, S. D. Roh, I. Adesida, and J. J. Coleman, "InGaAsP-InP Ridge-Waveguide BDR lasers with First-Order Surface Gratings Fabricated Using CAIBE," IEEE Photon. Technol. Lett., 9, 1445-1447 (1997).
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| [PDF] | 150. P. Fay, M. Arafa, W. Wohlmuth, C. Caneau, W. Wohlmuth, C. Caneau, S. Chandrasekhar, and I. Adesida, "Design, Fabrication, and Performance of High-Speed Monolithically Integrated InAlAs/InGaAs/InP MSM/HEMT Photoreceivers." IEEE J. Lightwave Technol., 15, 1871-1879 (1997).
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| [PDF] | 151. P. Wohlmuth, J.-W. Seo, P. Fay, C. Caneau, and I. Adesida, "A High-Speed ITO-InAlAs-InGaAs Schottky-Barrier Photodetector," IEEE Photon. Technol. Lett., 9, 1388-1390 (1997).
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| [PDF] | 152. P. Fay, W. Wohlmuth, C. Caneau, S. Chandrasekhar, and I. Adesida, "High-Speed Digital and Analog Performance of Low-Noise Integrated MSM-HEMT Photoreceivers," IEEE Photon. Technol. Lett., 9, 991-993 (1997).
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| [PDF] | 153. W. Wohlmuth, M. Arafa, P. Fay, and I. Adesida, "InGaAs Metal-Semiconductor-Metal Photodetectdors with a Hybrid Combination of Transparent and Opaque Electrodes," Appl. Phys. Lett., 70, 3026-3028 (1997).
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| [PDF] | 154. W. Wohlmuth, P. Fay, K. Vaccaro, E. A. Martin, and I. Adesida, "High-Speed InGaAs Metal-Semiconductor-Metal Photodetectors with Thin Absorption Layers," IEEE Photon. Technol. Lett., 9, 654-656 (1997).
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| [PDF] | 155. W. Wohlmuth, M. Arafa, P. Fay, J. W. Seo, and I. Adesida, "Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters," Jpn J. Appl. Phys., 36, 652-656 (1997).
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| [PDF] | 156. W. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, "A High Speed ITO-InAlAs/InGaAs Schottky Barrier Detector," IEEE Photon. Technol. Lett., 6, 1388-1391 (1997).
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| [PDF] | 157. A.T. Ping, A.C. Schmitz, I. Adesida, M. Asif Khan, Q. Chen, and J.W. Yang, "Characterization of Reactive Ion Etched-Induced damage to n-GaN surfaces Using Schottky Diodes," J. Electron. Mater., 26, 266-271 (1997).
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| [PDF] | 158. C. Youtsey, I. Adesida, and G. Bulman, "Highly anisotropic photoenhanced wet etching of n-type GaN," Appl. Phys. Lett., 71, 2161-2163 (1997).
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| [PDF] | 159. A.T. Ping, M. A. Khan, Q, Chen, J. W. Wang, and I. Adesida, "Dependence of DC and RF characteristics in gate length for high current AlGaN/GaN HFETs," Electron. Lett., 33, 1081-1082 (1997).
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| [PDF] | 160. A.T. Ping, M. A. Khan, and I. Adesida, "Dry etching of AlxGa1-xN using chemically assisted ion beam etching," Semiconduc. Science and Technol., 12, 133-135 (1997)
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| [PDF] | 161. Q. Chen, J. W. Wang, M. A. Khan, A. T. Ping, and I. Adesida, "High Transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates," Electron. Lett., 33, 1081-1082 (1997).
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| [PDF] | 162. Q. Chen, R. Gaska, M. A. Khan, M. S. Shur, A.T. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman, "Microwave performance of 0.25 µm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures," Electron. Lett., 33, 637-638 (1997).
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| [PDF] | 163. J. B. D. Soole, C. Caneau, H, P. Leblanc, N. C. Andreadakakis, A. Rajhet, C. Youtsey, and I. Adesida, "Suppression of Modal Birefringence in InP-InGaAsP Waveguides Through Use of Compensated Tensile Strain," IEEE Photon. Technol. Lett., 9, 61-63 (1997).
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| [PDF] | 164. K. Sengupta, S. Jackson, A. Curtis, W. Fang, J. Malin, T. Horton, Q. Hartman, H. Kuo, S. Thomas, J. Miller, K. C. Hsieh, I. Adesida, S. L. Chuang, M. Feng, G. Stillman, Y. C. Chang, W. Wu, J. Tucker, H. Chen, J. M. Gibson, J. Mazumder, L. Li, and H. C. Liu, "Growth and Characterization of InGaAs/InP p-Quantum-Well Infrared Photodetectors with Extremely Thin Quantum Wells," J. Electron. Mater., 26, 1382-1388 (1997).
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| [PDF] | 165. K. Sengupta, S. Jackson, A. Curtis, W. Fang, J. Malin, T. Horton, H. Kuo, A. Moy, J. Miller, K. C. Hsieh, K. Y. Cheng, H. Chen, I. Adesida, S. L. Chuang, M. Feng, G. Stillman. W. Wu, J. Tucker, Y. C. Chang, L. Li, and H. C. Liu, "Growth and Characterization of InGaAs/InP p-Quantum-Well Infra-red Photodetectors with Extremely Thin Quantum Wells," J. Electron. Mater., 26, 1382-1388, (1997).
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| [PDF] | 166. M. Arafa, W. Wohlmuth, P. Fay, and I. Adesida, "Effect of diffraction and Interference in Submicron Metal-Semiconductor-Metal Photodetectors," IEEE Transactions Electron Devices, 45, 62-67. 1998.
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| [PDF] | 167. C. Youtsey, G. Bulman, and I. Adesida, "Dopant-selective photoenhanced wet etching of GaN," J. Electron. Mater., 27, 282-287, 1998.
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| [PDF] | 168. C. Schmitz, A. T. Ping, M. A. Khan, Q. Chen, J. W. Wang, and I. Adesida, "Metal Contacts to n-type GaN," J. Electron. Mater., 27, 255-260, 1998.
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| [PDF] | 169. C. Youtsey, I. Adesida, G. Bulman, and L. T. Romano, "Smooth photoenhanced wet etching of n-type of GaN," Appl. Phys. Lett., 72, 560-562, 1998.
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| [PDF] | 170. A.T. Ping, Q. Chen, J. W. Wang, M. A. Khan, and I. Adesida, "DC and Microwave Performance of High Current AlGaN/GaN Heterostructure Field Effect Transistors Grown on p-type SiC Substrates," IEEE Electron Device Lett., 19, 54-56, 1998.
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| [PDF] | 171. A.T. Ping, Q. Chen, J. W. Wang, M. A. Khan, and I. Adesida, "The effect of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN," J. Electron. Mater., 27, 261-265, 1998.
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| [PDF] | 172. P. Fay, W. Wohlmuth, A. Mahajan, C. Caneau, S. Chandrasekhar, and I. Adesida, "Low Noise Performance of Monolithically Integrated 12 Gb/s PIN/HEMT Photoreceiver for Long Wavelength Transmission Systems," IEEE Photon. Technol. Lett., 10, 713-715, 1998.
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| [PDF] | 173. P. Fay, W. Wohlmuth, A. Mahajan, C. Caneau, S. Chandrasekhar, and I. Adesida, "A Comparative Study of Integrated Photoreceivers using MSM/HEMT and PIN/HEMT Technologies," IEEE Photon. Technol. Lett., 10, 582-584 , 1998.
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| [PDF] | 174. C. Youtsey, L. T. Romano, and I. Adesida, "Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations," Appl.Phys. Lett., 73, 797-799, 1998.
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| [PDF] | 175. Q. Chen, J. W. Wang, R. Gaska, M. A. Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgings, A. T. Ping, and I. Adesida, "High Power Microwave 0.25 µm-Gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistor," IEEE Electron Device Lett., 19, 44-46, 1998.
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| [PDF] | 176. A. Mahajan, P. Fay, M. Arafa, and I. Adesida, "Integration of InAlAs/InGaAs/InP Enhancement- and Depletion-Mode High Electron Mobility Transistors for High Speed Circuit Applications," IEEE Transactions Electron Devices, 45, 338-340, 1998.
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| [PDF] | 177. P. Fay, S. Chandrasekhar, and I. Adesida, "High Speed Optoelectronic Receivers for Fiber-Optic Communications," IEEE Circuits and Devices, 14, 16-25, 1998.
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| [PDF] | 178. D.V. Kuksenkov, G.E. Giudice, H. Temkin, R. Gaska. A. Ping, and I. Adesida, "Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates," Electronics Letters 34, 2274-2276, 1998
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| [PDF] | 179. C. Youtsey, L. T. Romano, and R. J. Molnar and I. Adesida, "Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching," Appl. Phys. Lett.74, 3537-3539, 1999.
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| [PDF] | 180. L. Zhou, A. T. Ping, K. Boutros, J. Redwing, and I. Adesida, "Characterization of rhenium Schottky contacts on n-type AlxGa1-xN," Electron. Lett. 35, 745-746, 1999.
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| [PDF] | 181. I. Adesida, A. Mahajan, G. Cueva, and P. Fay, "Novel HEMT Processing Technologies and Their Circuit Applications," Solid State Electronics 43, 1333-1338 (1999).
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| [PDF] | 182. W. Lu, X. W. Wang, R. Hammond, A. Kuliev, S. Koester, J. O. Chu, K. Ismail, T. P. Ma, and I. Adesida, "p-Type SiGe transistors with Low gate Leakage Using SiN Gate Dielectric," IEEE Electron Device Lett.20, 514-516, (1999).
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| [PDF] | 183. F.A. Khan and I. Adesida, "High rate etching of SiC using Inductively-Coupled-Plasma Reactive Ion Etching in SF6-based gas mixtures," Appl. Phys. Lett.75, 2268-2270 (1999).
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| [PDF] | 184. D.C. Dumka, G. Cueva, I. Adesida, H. Hier, and O. A. Aina, "Doped Multi-Channel AlAs0.56Sb0.44/In0.53Ga0.47As Field Effect Transistors," Electron. Lett. 35, 1673-1674 (1999).
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| [PDF] | 185. F.A. Khan, L. Zhou, A. T. Ping, and I. Adesida, "ICP-RIE Etching of AlxGa1-xN for application in Laser Facet Formation," J. Vac. Sci. Technol. B17, 2750-2754 (1999).
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| [PDF] | 186. A.T. Ping, D. Selvanathan, C. Youtsey, E. Piner, J. Redwing, and I. Adesida, "Gate Recessing of GaN MESFETs using photoelectrochemical etching," Electron. Lett. 35, 2140-2141 (1999).
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| [PDF] | 187. S. Rumyantsev, M.E. Levinshtein, R. Gaska, M.S. Shur, M.A. Khan, J.W. Yang, G. Simin, A.T. Ping, and I. Adesida, "Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates," Physica Status Solidi (A) 176, 201-204 (1999).
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| [PDF] | 188. L. Zhou, A. T. Ping, F. Khan, A. Osinsky, and I. Adesida, "Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices," Electron. Lett. 36, 91-93 (1999)
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| [PDF] | 189. D.C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, and I. Adesida, "Metamorphic In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors on GaAs with ft's over 200 GHz," Electron. Lett. 35, 1854-1855 (1999).
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| [PDF] | 190. W. Lu, A. Kuliev, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, "High Performance 0.1 µm Gate-Length P-Type SiGe MODFET's and MOS-MODFET's," IEEE Transactions Electron Devices 47(8), 1645-1652 (2000).
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| [PDF] | 191. L. Zhou, W. Lanford, A.T. Ping, J.W. Yang, M.A. Khan, and I. Adesida, "Low resistance Ti/Pt/Au ohmic contacts to p-type GaN," Appl. Phys. Lett. 76, 3451-3453 (2000).
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| [PDF] | 192. W. Lu, S. Koester, X.W. Wang, J.O. Chu, T.P. Ma, and I. Adesida, "Comparative Study of Self-Aligned and Nonself-Aligned SiGe p-metal-oxide-semiconductor Modulation-doped Field Effect Transistors with Nanometer Gate Length," J. Vac. Sci. Technol. B18, 3488-3492 (2000).
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| [PDF] | 193. A.T. Ping, E. Piner, J. Redwing, M.A. Khan and I. Adesida, "Microwave Noise Performance of AlGaN/GaN HEMTs," Electron. Lett. 36, 175-176 (2000).
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| [PDF] | 194. J.H. Jang, G. Cueva, D.C. Dumka, W.E. Hoke, P.J. Lemonias, and I. Adesida, "Long Wavelength In0.53Ga0.47As Metamorphic P-I-N Photodiodes on GaAs Substrates," IEEE Photon. Technol. Lett., 13,151-153 (2001).
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| [PDF] | 195. F.A. Khan, B. Roof, L. Zhou and I. Adesida, "Etching of Silicon Carbide for Device Fabrication and through Via-Hole Formation" J. Elect. Mat. 30(3), 212-219 (2001).
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| [PDF] | 196. W. Lu, J. Yang, M.A. Khan, and I. Adesida, "AlGaN/GaN HEMTs on SiC with over 100 GHz ft and Low Microwave Noise," IEEE Transactions on Electron Devices 48(3), 581-585 (2001).
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| [PDF] | 197. J.H. Jang, G. Cueva, D.C. Dumka, W.E. Hoke, P.J. Lemonias, P. Fay and I. Adesida, "Long Wavelength Metamorphic Double Heterojunction In0.53Ga0.47As/In0.52A10.48As Photodiodes on GaAs Substrates," Electronics Lett. 37(11), 707-708, (2001).
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| [PDF] | 198. W.E. Hoke, P.J. Lemonias, T.D. Kennedy, A. Torabi, E.K. Tong, R.J. Bourque, J.H. Jang, G. Cueva, D.C. Dumka, I. Adesida, K.L. Chang, and K.C. Hsieh, "Metamorphic Heterojunction Bipolar Transistors and P-I-N Photodiodes on GaAs Substrates Prepared by Molecular Beam Epitaxy," Journal of Vacuum Science Technology B 19(4), 1505-1509 (2001).
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| [PDF] | 199. D.C. Dumka, W.E. Hoke, P.J. Lemonias, G. Cueva, and I. Adesida, "High Performance 0.35 µm Gate-Length Monolothic Enhancement/Depletion Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs Substrates, IEEE Electron Device Letters 22(8), 364-366 (2001).
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| [PDF] | 200. V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, and I. Adesida, "0.25 µm Gate-length, MBE-grown AlGaN/GaN HEMTs with High Current and High FT" Electronics Lett. 37, 858-859 (2001).
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| [PDF] | 201. J.H. Jang, G. Cueva, D.C. Dumka, W.E. Hoke, P.J. Lemonias, P. Fay and I. Adesida, "The Impact of a Large bandgap Drift Region in Long-Wavelength Metamorphic Photodiodes," IEEE Photon. Technol. Lett., 13(10), 1097-1099 (2001).
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| [PDF] | 202. F.A. Khan, L. Zhou, V. Kumar, and I. Adesida, "Plasma Induced Damage Study to n-GaN using ICP-RIE," Journal of Vacuum Science and Technology B 19(6), 2926-2929 (2001).
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| [PDF] | 203. V. Kumar, W. Lu, F. Khan, R. Schwindt, E. Piner, and I. Adesida, "Recessed 0.25 µm AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE," Electronics Lett. 37, 1483-1485 (2001).
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| [PDF] | 204. F. A. Khan, V. Kumar, and I. Adesida, "Inductively-coupled-plasma induced damage in AlGaN/GaN HEMT’s," Electrochemical and Solid-State Letters, 5(2), G8-G9, (2002).
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| [PDF] | 205. P. Fay, C. Caneau, and I. Adesida, "High Speed MSM/HEMT and p-i-n/HEMT Monolithic Photoreceivers," IEEE Transactions on Microwave Theory and Techniques 50(1), 62-67 (2002).
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| [PDF] | 206. F. A. Khan, L. Zhou, V. Kumar, I. Adesida, and R. Okojie, "High Rate Etching of AlN using BCl3/Cl2/Ar inductively coupled plasma," Materials Science & Engineering B95, 51-54 (2002).
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| [PDF] | 207. F. A. Khan, L. Zhou, V. Kumar and I. Adesida, "Low-Damage Etching of Silicon Carbide in Cl2-based plasmas," Journal of Electrochemical Society 149 (7), G420-G423 (2002).
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| [PDF] | 208. J. H. Jang, G. Cueva, W. E. Hoke, P.J. Lemonias, P. Fay, and I. Adesida, "Metamorphic Graded Bandgap InGaAs/InGaAlAs/InAlAs Double Heterojunction P-i-I-N Photodiodes," IEEE Journal of Lightwave Technology, 20 (5), 507-514 (2002).
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| [PDF] | 209. V. Kumar, W. Lu, F.A. Khan, R. Schwindt, A. Kuliev, G. Simin*, J. Yang*, M. Asif Khan, and I. Adesida, "High performance 0.25 µm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm" Electronics Letters 38 (5), 252-253 (2002).
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| [PDF] | 210. C. Lee, W. Lu, E. Piner, and I. Adesida, "DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE," Solid State Electronics 46, 743-746 (2002).
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| [PDF] | 211. Xiuling Li, Young-Woon Kim, Paul Bohn, and Ilesanmi Adesida, "In-plane bandgap control in porous GaN through electroless wet chemical etching," Applied Physics Letters 80 (6), 980-982 (2002).
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| [PDF] | 212. W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, "A comparative study of surface passivation on AlGaN/GaN HEMTs," Solid State Electronics 46, 1441-1444 (2002).
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| [PDF] | 213. D. Selvanathan, L. Zhou, V. Kumar, J.P. Long, M.A.L. Johnson, J.F. Schetzina, and I. Adesida, "Ohmic contacts on n-type Al 0.59Ga 0.41N for solar blind detectors," Electronics Letters 38 (14), 755-756 (2002).
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| [PDF] | 214. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin*, J. Yang*, M. Asif Khan*, and I. Adesida, "AlGaN/GaN high electron mobility transistors on SiC with fT of over 120 GHz," IEEE Electron Device Letters 23, 452-454 (2002).
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| [PDF] | 215. V. Kumar, L. Zhou, D. Selvanathan and I. Adesida, "Thermally stable low resistance Ti/Al/Mo/Au multilayer ohmic contacts to n-GaN" Journal of Applied Physics 91, 1277-1280 (2002).
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| [PDF] | 216. D.I. Florescu, F.H. Pollak, W.B. Lanford, F. Khan, I. Adesida, and R.J. Molnar, "Ion beam processing effects on the thermal conductivity of n-GaN/sapphire (0001)," Journal of Applied Physics 92, 1712-1714 (2002).
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| [PDF] | 217. W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, "DC, RF, and Microwave Noise Performance of AlGaN/GaN HEMT's on Sapphire Substrates," IEEE Transactions on Microwave Theory and Techniques 50, 2499–2504, (2002).
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| [PDF] | 218. S. L. Rommel, J.H. Jang, W. Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley, A. Lepore, Z. Schellenbarger, and J. H. Abeles, "Effect of H2 on the Etch Profile of InP/InGaAsP Alloys in Cl2/Ar/H2 Inductively-Coupled-Plasma Reactive Ion Etching Chemistries for Photonic Device Fabrication," Journal of Vacuum Science and Technology B20, 1327-1330 (2002).
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| [PDF] | 219. L. Zhou, F. A. Khan, G. Cueva, V. Kumar, I. Adesida, M. R. Sardella, and F. A. Auret, "Thermal stability of rhenium Schottky Contacts on n-type AlxGa1-xN," Applied Physics. Letters 81, 1624-1626 (2002).
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| [PDF] | 220. W.E. Hoke, R.E. Leoni, C.S. Whelan, P. J. Lemonias, J. H. Jang, and I. Adesida, "High Frequency Metamorphic P-I-N Detectors and HEMT Transimpedance Amplifiers: Candidates for Fiber Optic Communications," Journal of Vacuum Science Technology B20, 1209-1212 (2002).
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| [PDF] | 221. V. Kumar, A. Kuliev, R. Schwindt, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, "High performance AlGaN/GaN High Electron Mobility Transistors on SiC," Physica Status Solidi A194, 456-459 (2002).
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| [PDF] | 222. Selvanathan D, Zhou L, Kumar V, Adesida I, "Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors," Physica Status Solidi A194, 583-586 (2002).
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| [PDF] | 223. J. H. Jang, W. E. Hoke, P. Fay, and I. Adesida, "Wavelength dependent characteristics of High speed Metamorphic P-i-I-N Photodiodes," IEEE Photonics Technology Letters, 15, 281-283 (2003).
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| [PDF] | 224. Z.-Q. Fang, D. C. Look, X.-L. Wang, J. Han, F. A. Khan, and I. Adesida, "Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition," Applied Physics Letters 82, 1562-1564 (2003).
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| [PDF] | 225. R. S. Schwindt, V. Kumar, A. Kuliev, G. Simin, J.-W. Yang, M.A. Khan, M. E. Muir, and I. Adesida, "Millimeter-wave high power 0.25 µm gate-length AlGaN/GaN HEMTs on SiC substrates," accepted for publication in IEEE Microwave and Wireless Components Lett. 13, (2003).
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| [PDF] | 226. D. Selvanathan, L. Zhou, V. Kumar, N. Finnegan, and I. Adesida, "Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaN," accepted for publication in Journal of Electronic Materials (2003).
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| [PDF] | 227. Tilghman L. Rittenhouse, Paul W. Bohn, and Ilesanmi Adesida, "Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching," accepted for publication in Solid State Communications
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| [PDF] | 228. H.-K. Kim, J.-W. Bae, T.-K. Kim, K.-K. Kim, T.-Y. Seong, and I. Adesida, "Inductively-coupled-plasma reactive ion etching of ZnO using BCl3-based plasmas," accepted for publication in Journal of Vacuum Science and Technology B.
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| [PDF] | 229. J.-W. Bae, C.-H. Jeong, H.-K. Kim, K.-K. Kim, N.-G. Cho, T.-Y. Seong, S.-J. Park, I. Adesida, and G-Y. Yeom, "High rate dry etching of ZnO in BCl3/CH4/H2 plasmas," accepted for publication in Japanese Journal of Applied Physics.
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| [PDF] | 230. V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, "High performance 0.25 µm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz," accepted for publication in Solid-State Electronics.
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